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2N4033
GENERAL PURPOSE AMPLIFIER AND SWITCH
DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb 45 C at T case 45 o C St orage Temperature Max. Operating Junction Temperature
o
Value -80 -80 -5 -1 0.8 4 -55 to 200 200
Unit V V V A W W
o o
C C 1/6
November 1997
2N4033
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 44 218
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -60 V V CE = -60 V I C = -10 A T amb = 150 o C -80 Min. Typ . Max. -50 -50 Un it nA A V
V ( BR)CBO Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) V CE(sat ) V BE(s at) hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain
I C = -10 mA
-80
V
I E = -10 A
-5
V
I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA I C = -100 A I C = -100 mA I C = -500 mA I C = -1 A I C = -100 mA T amb = -55 oC
IB = -15 mA IB = -50 mA IB = -15 mA IB = -50 mA V CE = -5 V V CE = -5 V V CE = -5 V VCE = -5 V V CE = -5 V 75 100 70 25 40 150 f = 1MHz f = 1MHz
-0.15 -0.5 -0.9 -1.1 300
V V V V
fT C EBO C CBO t s t f t on
Transition F requency Emitter Base Capacitance Collector Base Capacitance Storage Time Fall T ime Turn-on T ime
I C = -50 mA V CE = -10 V f = 100 MHz IE = 0 IE = 0 V EB = -0.5 V V CB = -10 V
500 110 20 350 50 100
MHz pF pF ns ns ns
I C = -500 mA V CE = -30 V I B1 = -IB2 = -50 mA I C = -500 mA V CE = -30 V I B1 = -IB2 = -50 mA I C = -500 mA V CE = -30 V I B1 = -IB2 = -50 mA
Pulsed: Pulse duration = 300 s, duty cycle 1 % See Test Circuit
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2N4033
Collector-emitter Saturation Voltage. Base-emitter Saturation Voltage.
Transition Frequency.
Collector-base Capacitance.
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2N4033
Test Circuit for ton, ts, tf.
PULSE GENERATOR : tr, tf < 20 ns PW = 1.0 s ZIN = 50 DC < 2 %
TO OSCILLOSCOPE : tr 10 ns ZIN > 100 K
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2N4033
TO-39 MECHANICAL DATA
mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch
D G I H
E F
A
L
B
P008B
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2N4033
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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